CMP Slurry
Our CMP (chemical mechanical planarization) slurry is specifically designed for the production of semiconductor devices.
Our slurry offers efficient removal rate, excellent planarity, low defect, and excellent film selectivity, making them indispensable for the manufacturing of state-of-the-art semiconducting devices.
Product List of CMP Slurry
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HS-0 series efficiently removes high step-height oxide pattern, typically used for memory manufacturing process.
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HS-T series is suitable for polishing films containing Cu, barrier metal, and SiO2 films, typically used for interconnect fabrication process.
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HS-1 series selectively removes SiO2 over other stopper films, making the slurry useful for STI process. Our unique nano ceria abrasive has small particle size with highly reactive surface, enabling ultra-low defect while maintaining high removal rate. Nano ceria abrasive is prepared via liquid-phase synthesis, in contrast to our other ceria slurries.
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HS-8 series is oxide-selective ceria slurry that enables selective polishing of SiO2 over SiN and/or polycrystalline silicon. The abrasive used in the series is our tailor-made polycrystalline ceria. Under polishing condition, abrasive degrades, continuously exposing fresh, highly-reactive ceria surfaces which effectively removes oxide films.
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