CMP Slurry
GPX
About the product
Our CMP (chemical mechanical planarization) slurry is specifically designed for the production of semiconductor devices. Our slurry offers efficient removal rate, excellent planarity, low defect, and excellent film selectivity, making them indispensable for the manufacturing of state-of-the-art semiconducting devices
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Oxide-Selective Ceria Slurry: HS-8XXX Series
HS-8XXX series are oxide-selective ceria slurry that enables selective polishing of SiO2 over SiN and/or polycrystalline silicon. The abrasive used in the series is our tailor-made polycrystalline ceria. Under polishing condition, abrasive degrades, continuously exposing fresh, highly-reactive ceria surfaces which effectively removes oxide films.
Selectivity towards various films are further optimized by combining with our additive. By the use of appropriate types and mixing ratio of additives, selectivity, planarity, and removal rate towards various stopper films are controlled.
Features
- Effectively polishes SiO2 films
- Optimized abrasive size and surface property makes our slurry suitable for the use in STI process
- Combination with our additive allows fine-tuning of polishing selectivity and planarization property.
High Removal Rate Ceria Slurry: HS-0XXX Series
HS-0XXX series efficiently removes high step-height oxide pattern, typically used for memory manufacturing process. These slurries combine our tailor-made abrasive with removal rate accelerator, enabling high removal rate.
Features
- Polishes SiO2 films at high removal rate
- Optimized abrasive size and surface property makes our slurry suitable for clearing high step-height pattern.
- High removal rate ensured even at dilute abrasive concentration (<1% CeO2)
Ultra-low Defect Nano Ceria Slurry: HS-1XXX Series
HS-1XXX series selectively removes SiO2 over other stopper films, making the slurry useful for STI process.
Our unique nano ceria abrasive has small particle size with highly reactive surface, enabling ultra-low defect while maintaining high removal rate. Nano ceria abrasive is prepared via liquid-phase synthesis, in contrast to our other ceria slurries. Like HS-8XXX series, removal rate, selectivity, and planarity are controlled in combination with our additives.
Features
- Very small abrasive
- Optimized abrasive size and surface property makes our slurry suitable for the use in STI process
- Combination with our additive allows fine-tuning of polishing selectivity and planarization property.
Cu and Barrier Metal Polishing Colloidal Silica Slurry: HS-TXXX Series
HS-TXXX series are suitable for polishing films containing Cu, barrier metal, and SiO2 films, typically used for interconnect fabrication process.
Depending on the customer’s polishing films and desired topography, Resonac offers various slurry lineups. Our slurry enables high removal rate at low abrasive concentration. Compared to other silica-based slurry, our slurry therefore allows fewer energy consumption and associated CO2 emission during storage and shipment.
Features
- Colloidal silica used
- Optimized formulation suitable for interconnect fabrication process.
- High removal rate even at dilute condition, saving overall energy consumption
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