InP Epitaxial Wafer
About the product
These epitaxial wafers consist of multi-element-based films of InGaAs or InGaAsP formed on an InP single-crystal substrate by metal organic chemical vapor deposition (MOCVD). We manufacture and sell epitaxial wafers customized to your requests.
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Applications
- Laser diodes
- Light receiving elements (PIN-PD, APD)
Characteristics
Compound Composition
- Indium gallium arsenide: GaInAs (InGaAs)
- Indium gallium arsenide phosphide: GaInAsP (InGaAsP)
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