Reflection-Type LED Chips (High-Brightness Types)
R Series, P Series
About the product
Resonac’s high-brightness LED chips demonstrate enhanced light-extraction efficiency by forming a reflection layer between the light-emitting layer and the supporting substrate.
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Merits
- Achieves high power by forming a reflection layer between the light-emitting layer and the supporting substrate.
- Provides a wide variety of chip sizes and wavelengths with a lineup that includes double-junction LED chips*1 and P-up reflection-type LED chips.*2
- Demonstrating the industry’s top-level performances with high power and low forward voltage (high-efficiency), the chips can be customized according to specific purposes.
- Small changes in LED characteristics before and after passing a current.
- *1 LED chips producing double output by using two PN junctions.
- *2 LED chips possessing the opposite polarity from the reflection-type LEDs’ mainstream N-up structure.
Characteristics
- ※ Please refer to “Chip-type C” in the catalogue.
Usage examples
Photocouplers, photorelays, automotive sensors, automotive exteriors, industrial sensors, barcode readers, encoders, medical sensors, biometric devices, infrared lights
Component composition
- Aluminum indium gallium phosphide: AlGaInP (AlInGaP)
- Aluminum gallium phosphide: AlGaAs (GaAlAs)
Specification sheet
- R6D-52SSC
- R66-26GSA
- R66-35GSA
- R69-52GSA
- R78-35GSE
- R81-35GSE
- R85-26GSE
- R85-35GSE
- R85-52GSE
- R87-35GSE
- R94-35GSE
- R97-35GSE
- P85-26ATA
- P85-26GTA
- R81-110GWS
- R85-110GWS
- R94-110GWS
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