Epitaxial Wafer for PDs​

InGaAs epitaxial wafer

About the product

Resonac’s InGaAs epitaxial wafer is a material used for photodetectors. The InGaAsP layer is grown on an InP monocrystal substrate using the metal organic chemical vapor deposition technique (MOCVD).

Inquiry of this product

Merits

  • Curbs dark currents in the devices with less crystal defects.​
  • Improves the yield of customers’ device manufacturing processes.​
  • Allows the use of dopants that meet individual purposes.​
  • Electric characteristics evaluations (Vbr) from the customers’ viewpoints are possible in the epitaxial wafer’s design and development phase.

Usage examples

PIN (P-Intrinsic-N Photo Diode), APD (Avalanche Photo Diode)​

Compound composition

  • Indium gallium arsenide: GaInAs (InGaAs)​​
  • Indium gallium arsenide phosphide: GaInAsP (InGaAsP)​

Inquiry of this product