Epitaxial Wafer for PDs
InGaAs epitaxial wafer
About the product
Resonac’s InGaAs epitaxial wafer is a material used for photodetectors. The InGaAsP layer is grown on an InP monocrystal substrate using the metal organic chemical vapor deposition technique (MOCVD).
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Merits
- Curbs dark currents in the devices with less crystal defects.
- Improves the yield of customers’ device manufacturing processes.
- Allows the use of dopants that meet individual purposes.
- Electric characteristics evaluations (Vbr) from the customers’ viewpoints are possible in the epitaxial wafer’s design and development phase.
Usage examples
PIN (P-Intrinsic-N Photo Diode), APD (Avalanche Photo Diode)
Compound composition
- Indium gallium arsenide: GaInAs (InGaAs)
- Indium gallium arsenide phosphide: GaInAsP (InGaAsP)
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