MCF-200HS

Low Transmission Loss, Low CTE Adhesive Film

About the product

  • Product
    Copper Clad Film

    MCF-200HS

  • Applications
    • Semiconductor packages. (FC-CSP,PoP,SiP)
    • Thinner Module PWB

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Features

  • Film material (copper clad film) that can achieve an insulation layer of 15 μm or less.
  • Excellent dielectric properties, contributing to thinner insulation layer thickness and lower transmission loss.
  • Excellent insulation properties.

Characteristics

Reliability test (Layer to layer)

  • Sample: MCF-200HS  Dielectric thickness : 20 μm
  • Pre-treatment condition: JEDEC Level 2 (60℃/60 %RH 120 hr + 260℃ reflow 6 cycle)
  • Evaluation condition: 130℃/85%RH, 6 V 

Dielectric properties (Frequency drift)

   

  • Sample: MCF-200HS Dielectric thickness: 20 μm
  • Evaluation method:
    5~20 GHz: SPDR
    36~60 GHz: Circular Cut-off Waveguide method

Copper Clad Film

Item Conditon ※3 Unit Actual Value Reference
(IPC-TM-650)
MCF-200HS
Tg DMA A 250~270
CTE ※1 X(30~120℃) A ppm/℃ 35~40 -
Y(30~120℃) 35~40
Solder Heat Resistance (260℃) A sec. ≧300
Copper Peel Strength 3 μm A kN/m 0.5~0.7 2.4.8
12 μm (LP) 0.5~0.7
Elastic Modulus (Tensile) A GPa 5~7
Dielectric Constant 10 GHz ※2 A 2.9~3.1 -
Dissipation Factor 10 GHz ※2 0.003~0.004
  • ※1  Heating Rate: 10℃/min. (Tensile)
  • ※2  Measured by Split post dielectric resonator (SPDR).
  • ※3 Refer to"Condition Note"PDFを開く
  • ※ Above data are experimental results and not guaranteed.

Standard Specifications

Copper Clad Film

 

Part Number Copper foil type Dielectric thickness
MCF-200HS 1.5, 3, 12μm (LP) 15 ± 2 μm
20 ± 2 μm
25 ± 2 μm

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