MCF-770G(Type P)

Low CTE Adhesive Film with Primer

About the product

  • Product
    Copper Clad Film

    MCF-770G(Type P)

  • Applications
    • Semiconductor packages (FC-CSP,PoP,SiP)
    • Thinner Module PWB

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Features

  • Film material (copper clad film) that can achieve an insulation layer of 15 μm or less.
  • Excellent warpage characteristics even in ultra-thin substrates by low CTE and high modulus.
  • Excellent adhesion with copper, enabling fine wiring formation by semi-additive process.
  • Excellent insulation properties.

Characteristics

Construction

   

Fine patterning with Semi-additive process

  • Design: L/S = 10/10 μm with MCF-770G(Type P)

Reliability test (Layer to layer)

 

  • Sample: MCF-770G(Type P)  Dielectric thickness : 25 μm
  • Pre-treatment condition: JEDEC Level 2 (60℃/60%RH 120hr + 260℃ reflow 6 cycle)
  • Evaluation condition: 130℃/85%RH, 6 V 

Copper Clad Film

Item Conditon ※3 Unit Actual Value Reference
(IPC-TM-650)
MCF-770G(Type P)
Tg DMA A ℃ 290～310 ‐
CTE ※1 X(30～120℃) A ppm/℃ 18～20 -
Y(30～120℃) 18～20
Solder Heat Resistance (260 ℃) A sec. ≧300 ‐
Copper Peel Strength 3 μm A kN/m 0.9～1.0 2.4.8
12 μm (LP) 0.9～1.0
Elastic Modulus (Tensile) A GPa 8～10 ‐
Dielectric Constant 10 GHz ※2 A － 3.2～3.3 -
Dissipation Factor 10 GHz ※2 0.006～0.008
  • ※1 Heating Rate: 10℃/min. (Tensile)
  • ※2  Measured by Split post dielectric resonators (SPDR).
  • ※3 Refer to"Condition Note"PDFを開く
  • ※　Above data are experimental results and not guaranteed.

Standard Specifications

 Copper Clad Film

 

Part Number Copper foil type Primer thickness Dielectric thickness
MCF-770G(Type P) 1.5, 3, 12 μm (LP) 2 μm 15 ± 2 μm
20 ± 2 μm
25 ± 2 μm

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