Resonac Successfully Develops 300 mm SiC Single-Crystal Substrates for Next-Generation Electronics

September 15, 2026
Resonac Corporation

Resonac Corporation (President and CEO: Hidenori Takahashi; hereinafter “Resonac”) has successfully grown and processed 300 mm (12-inch) silicon carbide (SiC) single crystals, a next-generation electronics material.

The 300 mm (12-inch) diameter represents one of the world’s largest SiC substrate sizes currently under development*1 and marks an important technological milestone toward the large-diameter and high-quality advancement of SiC substrates and SiC epitaxial wafers. 

SiC is attracting attention as a material for power semiconductors due to its lower power-conversion losses and reduced heat generation compared with conventional silicon‑based power devices, contributing to improved energy efficiency. Demand is expanding particularly in electric vehicles (EVs) and renewable energy applications, and adoption is also increasing in areas requiring high efficiency, such as power supplies for data centers. Against this backdrop of market growth, Resonac currently supplies mainly 150 mm (6‑inch) SiC epitaxial wafers—the market mainstream—and has also begun shipments of 200 mm (8‑inch) SiC epitaxial wafers*2.

In addition, single‑crystal SiC materials, which exhibit high thermal conductivity, are drawing attention for potential use as heat‑spreading substrates and advanced packaging substrates for semiconductors used in AI servers and high‑performance computing (HPC). Their high refractive index also makes them a promising candidate for applications such as AR smart glasses.

This achievement forms part of Resonac’s ongoing efforts to advance the large‑diameter and high‑quality development of SiC substrates, leveraging the company’s long‑standing expertise in SiC single‑crystal growth and substrate processing, as well as outcomes from the Green Innovation Fund Program*3.

Guided by its commitment to being “Best‑in‑Class,” Resonac will continue to pursue technological innovation in SiC single‑crystal substrates and epitaxial wafers. Through the provision of high‑performance, high‑reliability SiC materials, the company aims to contribute to the evolution of the power electronics market and the realization of a more sustainable society.

 

*1 Based on Resonac’s research (as of August 2026, referencing publicly available information).

*2 https://www.resonac.com/news/2022/09/07/2259.html

*3 Green Innovation Fund (GI Fund): A fund established within the New Energy and Industrial Technology Development Organization (NEDO) to support the realization of carbon neutrality by 2050. Resonac is conducting R&D under the project theme “SiC Wafer Technology Development for Next-Generation Green Power Semiconductors,” which is part of the GI Fund’s initiative for building next-generation digital infrastructure.

*The Green and Sustainable Chemistry (GSC) Awardsare presented annually by the Japan Association for Chemical Innovation (JACI) to recognize technologies and products that contribute to reducing environmental impact and promoting the social implementation of innovative chemical technologies for the realization of a sustainable society.