Business Strategies - SiC Epitaxial Wafers



Mission of SiC Epitaxial Wafers Business
As the world’s largest independent supplier and technology leader of SiC epitaxial wafers, key materials for improving the performance of the growing SiC power semiconductors, we will strive to provide solutions while co-creating with customers to help realize energy conservation around the world.

Strengths and Competitive Advantages for the Achievement of the Long-Term Vision
We will make use of Resonac’s strengths and competitive advantages to become a world-class functional chemical company and a company that can compete on the world stage by 2030.
- We are the world’s largest distributor of SiC epitaxial wafers with strengths in technology that reduces defects in SiC wafers with epitaxial layers
- As a specialized manufacturer of SiC epitaxial wafers, we focus solely on the production of SiC wafers and SiC epitaxial wafers. This enables the provision of SiC epitaxial wafers that meet the needs of device makers, who are our customers, by coordinating with them
- Our SiC epitaxial wafers have been used for various applications owing to their high quality, including industry-leading low levels of surface-defect density and basal-plane dislocation
- Possession of knowledge in DX, production management, and manufacturing that supports our technological advantages
- Advantages in intellectual assets (based on research by France-based Know Made)
- Amid growing expectations for an increase in the number of chips per wafer due to a larger wafer diameter, we started shipping samples of eight-inch (200 mm) SiC epitaxial wafers in 2022 with the aim of starting early mass production

Strategies of SiC Epitaxial Wafers for the Achievement of the Long-Term Vision
In response to the expansion of demand in the SiC power semiconductor market due to the promotion of decarbonization and electrification measures, we will work to expand our ability to supply SiC epitaxial wafers and increase the production of large-diameter highly productive 8-inch (200-mm) SiC epitaxial wafers.
What are SiC Power Semiconductors
Power semiconductors control and convert electric power and are used in all types of devices that are powered by electricity, everything from industrial equipment to familiar home appliances. With less power loss and heat generation than conventional silicon-based power semiconductors, SiC power semiconductors are key devices that contribute to energy conservation, achieving both voltage characteristics and conversion efficiency. The market for SiC power semiconductors is expanding as they are widely used in various applications, such as xEVs including electric vehicles (EVs), renewable energy, high-speed charging stations for xEVs, and railcars.

Attractiveness of SiC Power Semiconductors
1.Compactness and weight reduction
SiC power semiconductors have high withstand voltage and excellent thermal characteristics. Compared to conventional silicon-based power semiconductors, SiC power semiconductors enable compacter design and contribute greatly to weight reduction of electric units.
2.Extended cruising range
It is known that the cruising range of vehicles using SiC power semiconductors is extended due to the combined effect of weight reduction and battery performance improvement (loss reduction), making SiC power semiconductors key devices for the diffusion of electric vehicles.
Vision for 2030 and Roadmap to Achieve It
TOPICS 2024 SiC Eptaxial Wafers Business
GreenGreen Innovation Fund project
Initiatives in “Development of Eight-Inch SiC Wafers for Next-Generation Green Power Semiconductors”
We proposed the “SiC Wafer Technology Development for Next-generation Green Power Semiconductors” (hereinafter the “Project”) as one of the R&D items in the Green Innovation Fund Project for constructing next-generation digital infrastructure. The New Energy and Industrial Technology Development Organization (hereinafter “NEDO”) publicly solicited applicants for this project, and our proposal was adopted in 2022. This Project aims to reduce costs of SiC power semiconductors by increasing the diameter of SiC epitaxial wafers and reducing the density of deficiencies in SiC epitaxial wafers and SiC wafers, which are used as a raw material in producing them. This Project is a long-term R&D project to be carried out from fiscal 2022 to 2030, in which we are developing technology to accelerate the growth of SiC bulk single crystal in cooperation with NEDO. The results of our R&D activities will be evaluated by multiple device manufacturers. With the aim of social implementation of the outcomes, we will strive to contribute to the further spread of high-performance and highly-reliable SiC power semiconductors.
